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| Автор: Randall Feenstra M. |
| Издательство: John Wiley & Sons Limited |
| Cтраниц: 1 |
| Формат: PDF |
| Размер: 0 |
| ISBN: 9780470751824 |
| Качество: excellent |
| Язык: |
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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
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